The Interpretation of Ellipsometric Measurements of Ion Bombardment of Noble Gases on Semiconductor
نویسنده
چکیده
The influence of ion bombardment on the structure of the silicon lattice has been the subject of numerous investigations. The various effects induced by low energy ion bombardment in the outer layers of a solid lattice damage, ion implantation, surface roughness, sputtering and surface state changes are reflected in changes of the complex dielectric constant Z, which can be measured by means of spectroscopic ellipsometry [l-3]. This paper reports noble gas ion bombardment and desorption studies carried out on Si(ll1) and analysed using spectroscopic ellipsometry.
منابع مشابه
Simulation of the cathode surface damages in a HOPFED during ion bombardment
Most vacuum devices are hampered by ion bombardment due to residual gases. Sometimes, it causes the breakdown of devices and shortens their life. In this article, the effect of the ion bombardment on the cathode surface in a structure of a field emission display was simulated. In this structure, a special type of spacer was used, named “hop” and “flu” spacer. The trajectories of electrons emitt...
متن کاملBest Image Conditions in Field Ion Microscopy
The Field Ion Microscope image quality is dependent on operational ? which can be adjusted in order to improve resolution and contrast, he best image operation conditions are discussed with the aim to define them quantitatively. To do so, a JWKB calculation for the ionization distribution is used and a new interpretation of the best image conditions is proposed. An approximate range for the bes...
متن کاملOptical plasma emission spectroscopy of etching plasmas used in Si-based semiconductor processing
Previously published applications of optical emission spectroscopy as a quantitative plasma diagnostic technique are reviewed. By adding traces of rare gases to the plasma, electron temperatures (Te) and relative electron and ion densities can be determined from electron impact-induced optical emission. Excitation from both the ground state and metastable states of the rare gases must be consid...
متن کاملThe Possibility of Selective Adsorption and Sensing of the Noble Gaseous Species by the C20 Fullerene, the Graphene Sheets, and the N4B4 Cluster
There are only a handful reports about the sensor systems having the ability of detecting the existence of the noble gases. Chemical reluctance of these gaseous species causes them to have no chemical interactions like hydrogen bonding with the chemically designed nano-sized sensors. Noble gasses usually have no atomic charges nor do change the total polarity of the molecular sensor systems. Th...
متن کاملRare Gas Mobility in Pure and Doped Potassium Bromide
The mobility of the inert gases argon and xenon in pure and doped single crystals of KBr was studied. The gases were introduced by ion bombardment. The recently established system of stages was used to interpret the results. Normal volume diffusion was found for xenon at low gas concentration, the activation enthalpy being 1.4 + 0.2 eV. This release was independent of doping, thus favoring a tr...
متن کامل